Abstract :
Over the last three decades, layered nano-structures, such as superlattices (SLs) and quantum wells (QWs) have played notable roles in expanding the forefront of physics and electronics. The births and advances of QW lasers, selectively-doped heterojunction FETs (HEMTs), and related 2D electron devices, for example, have made huge impacts in various branches of information technology. One should note that all of these nano-structures were first realized by molecular beam epitaxy (MBE) that permitted the formation of atomically flat and abrupt hetero-interfaces. This marvellous success of MBE has then inspired related attempts in other research areas, inducing breakthroughs in such fields as magnetic and superconducting materials and devices.
Keywords :
high electron mobility transistors; molecular beam epitaxial growth; quantum well devices; quantum well lasers; reviews; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; semiconductor quantum wires; semiconductor superlattices; advanced quantum nano-structures; atomically flat abrupt hetero-interfaces; electronic properties; epitaxial synthesis; information technology; injection lasers; layered nano-structures; magnetic devices; magnetic materials; molecular beam epitaxy; nonlinear transport devices; photonic properties; quantum dot memories; quantum dot/quantum wire structures; quantum well lasers; review; selectively-doped heterojunction field effect transistors; superconducting materials; superlattices; two dimensional electron devices; FETs; HEMTs; Heterojunctions; Laser sintering; Laser theory; MODFETs; Molecular beam epitaxial growth; Physics; Quantum well lasers; Superlattices;
