Title :
Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications
Author :
Tombak, A. ; Tito Ayguavives, F. ; Maria, J.-P. ; Stauf, G.T. ; Kingon, A.I. ; Mortazawi, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.
Keywords :
Barium compounds; CVD coatings; Capacitors; Circuit tuning; Dielectric losses; Low-power electronics; MMIC; Permittivity; Strontium compounds; UHF integrated circuits; (Ba/sub 0.7/Sr/sub 0.3/)TiO/sub 3/; 45 to 200 MHz; 7 V; MOCVD; RF components; dielectric loss tangent; frequency dependent dielectric permittivity; microwave components; parallel plate capacitors; thin film capacitors; tunability; voltage amplitudes; Barium; Binary search trees; Capacitors; Dielectric losses; Dielectric thin films; Low voltage; Radio frequency; Strontium; Titanium compounds; Transistors;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861790
