DocumentCode :
2320805
Title :
A new concept of lateral GaAs field emitter for sensor applications
Author :
Arslan, D. ; Barroso, J. ; Dehe, A. ; Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Darmstadt, Germany
fYear :
1998
fDate :
19-24 July 1998
Firstpage :
316
Lastpage :
317
Abstract :
Field emission from metals and semiconductors has received remarkable attention in recent years due to their promise as high-frequency devices as well as for flat-panel displays. A further application of field emitters rely on the fact that the field emission current density strongly depends on the distance between the anode and the cathode. Hence this effect is predestinated for sensing of vibration, acceleration and pressure. We present a novel lateral field emitter structure based on GaAs for sensing applications.
Keywords :
III-V semiconductors; electron field emission; gallium arsenide; microsensors; vacuum microelectronics; vibration measurement; GaAs; lateral GaAs field emitter; semiconductor; vibration sensor; Acceleration; Anisotropic magnetoresistance; Anodes; Cathodes; Fabrication; Gallium arsenide; Micromachining; Temperature sensors; Vibrations; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
Type :
conf
DOI :
10.1109/IVMC.1998.728775
Filename :
728775
Link To Document :
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