Title :
A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 /spl mu/m lasers
Author :
Spring Thorpe, A.J. ; Extavour, M. ; Griswold, E.M. ; Shen, A. ; White, J.K. ; Hinzer, K.
Author_Institution :
Optical Components, Nortel Networks, Ottawa, Ont., Canada
Abstract :
As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585/spl deg/C. Deposition of both digital and bulk alloy layers was carried out in a V80H system, on two- and three inch n-InP substrates, and growth temperatures were monitored using absorption band-edge thermometry. The basic MQW structures consisted of 10 nm lattice matched confinement layers of digital alloy InAlGaAs (/spl sim/1.0 /spl mu/m bandgap), or bulk InAlAs, bounding 6 nm layers of digital alloy In/sub 0.73/Al/sub 0.165/Ga/sub 0.105/As.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; energy gap; gallium arsenide; indium compounds; interface states; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; transmission electron microscopy; 1.3 /spl mu/m lasers; 1.3 micron; 470 to 585 C; 6 nm; InAlGaAs; absorption band-edge thermometry; forbidden temperature region; growth temperatures; lattice matched confinement layers; planar strained InAlGaAs MQW structures growth; Absorption; Capacitive sensors; Digital alloys; Lattices; Monitoring; Quantum well devices; Quantum well lasers; Temperature distribution; Temperature measurement; Temperature sensors;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037770
