Title :
Terrace and reconstruction dynamics on the growing GaAs[001] surface studied by synchrotron X-ray diffraction
Author :
Braun, Wolfgang ; Jenichen, Bernd ; Kaganer, Vladimir M. ; Shtukenherg, A.G. ; Däweritz, Lutz ; Ploog, Klaus H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
Summary form only given. Using a newly-built dedicated beamline at the synchrotron BESSY II in Berlin, we have studied the growth dynamics during GaAs[001] homoepitaxy. Due to a characteristic shift of the surface unit cell from layer to layer, growth oscillations at or close to MBE-typical growth rates can be observed in situ using X-ray diffraction at grazing incidence and exit angles. We also compare RHEED and X-ray diffraction oscillations measured simultaneously.
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; synchrotron radiation; GaAs; GaAs[001] homoepitaxy; MBE-typical growth rates; RHEED; growing GaAs[001] surface; growth oscillations; reconstruction dynamics; surface unit cell; synchrotron BESSY II; synchrotron X-ray diffraction; terrace dynamics; Gallium arsenide; Lattices; Linearity; Reflection; Surface reconstruction; Synchrotrons; Temperature; Time measurement; X-ray diffraction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037781
