Title :
MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]
Author :
Nishikawa, A. ; Katayama, R. ; Onabe, K. ; Shirak, Y.
Author_Institution :
Dept. of Adv. Mater. Sci., Univ. of Tokyo, Japan
Abstract :
The GaAsN alloy has attracted much attention due to the scientific interest for the huge bandgap bowing as well as the technological importance for optoelectronic devices. The study of the bandgap energy for the higher N contents, however, is scarcely reported because of the extreme immiscibility. In this work, the bandgap energy and its temperature dependence of GaAsN (N=0-4.5%) alloy films have been investigated by photoreflectance (PR) spectroscopy.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; molecular beam epitaxial growth; optical constants; photoreflectance; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaAs; GaAs [001]; GaAsN; GaAsN alloy films; MBE growth; bandgap energy; huge bandgap bowing; immiscibility; photoreflectance; photoreflectance spectroscopy; temperature dependence; Absorption; Curve fitting; Gallium arsenide; Materials science and technology; Molecular beam epitaxial growth; Optical films; Photonic band gap; Substrates; Temperature dependence; X-ray diffraction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037803
