MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]

Author

Nishikawa, A. ; Katayama, R. ; Onabe, K. ; Shirak, Y.

Author_Institution

Dept. of Adv. Mater. Sci., Univ. of Tokyo, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

149

Lastpage

150

Abstract

The GaAsN alloy has attracted much attention due to the scientific interest for the huge bandgap bowing as well as the technological importance for optoelectronic devices. The study of the bandgap energy for the higher N contents, however, is scarcely reported because of the extreme immiscibility. In this work, the bandgap energy and its temperature dependence of GaAsN (N=0-4.5%) alloy films have been investigated by photoreflectance (PR) spectroscopy.

Keywords

III-V semiconductors; energy gap; gallium arsenide; gallium compounds; molecular beam epitaxial growth; optical constants; photoreflectance; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaAs; GaAs [001]; GaAsN; GaAsN alloy films; MBE growth; bandgap energy; huge bandgap bowing; immiscibility; photoreflectance; photoreflectance spectroscopy; temperature dependence; Absorption; Curve fitting; Gallium arsenide; Materials science and technology; Molecular beam epitaxial growth; Optical films; Photonic band gap; Substrates; Temperature dependence; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037803

Filename

1037803