Nanofabrication of heavily carbon doped p-type GaAs by atomic force microscope nano-oxidation process and its application to single hole transistors

Author

Matsuzaki, Yuichi ; Yamada, Akira ; Konagai, Makoto

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

155

Lastpage

156

Abstract

Scanning probe microscopes (SPMs), such as scanning tunneling microscopes (STMs) and atomic force microscopes (AFMs), are now routinely used as tools of not only observing surfaces but also fabricating nanoscale structures, by means of tip-induced oxidation of localized regions. In this study, we successfully oxidized heavily carbon doped p-type GaAs films by AFM nano-oxidation process and applied them to realize single hole transistors (SHTs).

Keywords

III-V semiconductors; atomic force microscopy; carbon; gallium arsenide; heavily doped semiconductors; nanotechnology; oxidation; single electron transistors; AFM nano-oxidation process; GaAs:C; SHTs; atomic force microscope nano-oxidation process; atomic force microscopes; heavily carbon doped p-type GaAs; localized regions; nanofabrication; nanoscale structures; scanning probe microscopes; scanning tunneling microscopes; single hole transistors; tip-induced oxidation; Atomic force microscopy; Current measurement; Gallium arsenide; Molecular beam epitaxial growth; Nanofabrication; Oxidation; Scanning electron microscopy; Temperature; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037806

Filename

1037806