Title :
Rank modulation with multiplicity
Author :
Anxiao Jiang ; Yue Wang
Author_Institution :
Comput. Sci. & Eng. Dept., Texas A&M Univ., College Station, TX, USA
Abstract :
Rank modulation is a scheme that uses the relative order of cell levels to represent data. Its applications include flash memories, phase-change memories, etc. An extension of rank modulation is studied in this paper, where multiple cells can have the same rank. We focus on the rewriting of data based on this new scheme, and study its basic properties.
Keywords :
error correction codes; flash memories; modulation coding; phase change memories; rewriting systems; data rewriting; multiple cell; multiplicity; rank modulation; Ash; Modulation; Noise; Phase change materials; Phase change memory; Programming; Tin;
Conference_Titel :
GLOBECOM Workshops (GC Wkshps), 2010 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
978-1-4244-8863-6
DOI :
10.1109/GLOCOMW.2010.5700265
