Title :
Structure and composition of (GaIn)(NAsSb)/GaAs multi quantum well structures grown by MBE
Author :
Volz, K. ; Gambin, V. ; Ha, W. ; Wistey, M. ; Harris, J.S.
Author_Institution :
Solid State Photonics Lab., Stanford Univ., CA, USA
Abstract :
Mixed III-V nitride semiconductor alloys have a theoretically predicted large bandgap bowing, which would allow 1.3 to 1.55 /spl mu/m wavelength emission. In this study, the novel quaternary (GaIn)(NAs) and pentenary (GaIn)(NAsSb) material systems were grown compressively strained on GaAs substrates at low substrate temperatures by MBE.
Keywords :
III-V semiconductors; X-ray diffraction; energy gap; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; (GaIn)(NAsSb)-GaAs; (GaIn)(NAsSb)/GaAs multi quantum well structures; 1.3 to 1.55 micron; GaAs; MBE; bandgap bowing; composition; high resolution X-ray diffraction; high resolution transmission electron microscopy; high-quality structures; miscibility gap; phase separation effects; Capacitive sensors; Composite materials; Crystalline materials; Gallium arsenide; Photonic band gap; Quantum well devices; Semiconductor materials; Solid state circuits; Substrates; X-ray diffraction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037829
