Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry

Author

Averbeck, R. ; Koblmueller, G. ; Riechert, H. ; Pongratz, P.

Author_Institution

Corporate Res. Photonics, Infineon Technol. AG, Munich, Germany

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

203

Lastpage

204

Abstract

We present a study of nucleation and growth phenomena during molecular beam epitaxy of GaN on GaN templates, sapphire, 6H-SiC and AlN using line-of-sight quadrupole mass spectrometry as a novel in situ technique. Under Ga-rich conditions mandatory for high film quality, monitoring the amount of desorbing Ga atoms facilitates a quantitative determination of the current growth rate.

Keywords

III-V semiconductors; MOCVD; Rutherford backscattering; atomic force microscopy; gallium compounds; molecular beam epitaxial growth; nucleation; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Al/sub 2/O/sub 3/; AlN; GaN; GaN nucleation; MOVPE; RHEED; Rutherford backscattering; SiC; in situ line-of-sight mass spectrometry; line-of-sight quadrupole mass spectrometry; molecular beam epitaxy; novel in situ technique; reflection high energy electron diffraction; Atomic force microscopy; Gallium nitride; Mass spectroscopy; Molecular beam epitaxial growth; Multilevel systems; Photonics; Physics; Silicon carbide; Solid state circuits; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037830

Filename

1037830