Title :
Homoepitaxial growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) substrates
Author :
Bhattacharyya, A. ; Friel, I. ; Moustakas, T.D. ; Maruska, H.P. ; Hill, D.W. ; Gallagher, J.J. ; Chou, M.M.C. ; Chai, B.
Author_Institution :
Dept. of Electr. Eng., Boston Univ., MA, USA
Abstract :
MQWS based on quaternary III-nitride alloys are likely to be the active region of UV emitters as well as other optical devices like modulators. The majority of reported work so far is based on GaN/AlGaN MQWs, grown heteroepitaxially along the polar direction [0001] on a variety of substrates. There is also some recent work on growing such MQWs heteroepitaxially along the non-polar [10-10] direction on LiAlO/sub 2/ substrates.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; optical modulation; semiconductor growth; semiconductor quantum wells; C-GaN polar substrates; GaN; GaN-(InGaAl)N; GaN/(In,Ga,Al)N multiple quantum wells; LiAlO/sub 2/; LiAlO/sub 2/ substrates; active region; homoepitaxial growth; modulators; optical devices; polar direction; radiofrequency-plasma assisted molecular beam epitaxy; ultraviolet emitters; Aluminum gallium nitride; Gallium nitride; Lattices; Optical devices; Optical modulation; Photonic crystals; Physics; Quantum well devices; Substrates; Surface reconstruction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037842
