Growth and characterisation of CdSe:Mn quantum dots

In this paper, we report the optical properties of CdSe:Mn dots grown by Atomic Layer Epitaxy (ALE). The samples were grown on GaAs substrates with a 150nm buffer of ZnSe deposited by normal MBE. CdSe layers of different thicknesses were deposited by ALE and then capped with ZnSe. Quantum dot emission was observed for CdSe layers more than 3 ML thick. Two sets of layers containing dots have been grown which were doped with Mn to give concentrations ranging from one to approximately ten Mn ions per dot. One set was capped for optical studies and the other left uncapped. For the uncapped samples, dot densities of the order of /spl sim/10/sup 9/ cm/sup -2/ were measured by Atomic Force Microscopy (AFM) measurements obtained immediately after growth (figure 1).