Title :
Improvement of crystalline quality of GaAs/sub y/P/sub 1-x-y/N/sub x/ layers with high nitrogen compositions by low-temperature growth under atomic hydrogen irradiation
Author :
Momose, Kenji ; Yonezu, Hiroo ; Furukawa, Yuzo ; Utsumi, Atsushi ; Shinohara, Sei
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
Abstract :
We have realized the dislocation-free and lattice-matched Si/GaP/sub 1-x/N/sub x//Si (x=2.9%) structure for optoelectronic integrated circuits (OEICs). The GaPN layer lattice-matched to Si showed luminescence with a peak wavelength of about 660 nm at RT. It is particularly required to find out the growth techniques which increases the nitrogen composition of III-V-N alloys in order to form an active layers with various wavelengths on Si substrates. However, crystalline quality has tended to be degraded with the increase in nitrogen compositions. Thus, we tried to grow the high quality III-V-N alloys with high nitrogen compositions at low temperature under atomic hydrogen (H) irradiation by solid-source molecular beam epitaxy.
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; molecular beam epitaxial growth; photoluminescence; radiation effects; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; 450 C; 660 nm; GaAs; GaAs/sub y/P/sub 1-x-y/N/sub x/ layers; GaP; GaP substrates; GaPN-GaP; Si; X-ray diffraction; XRD; atomic H irradiation; growth rate dependences; high N compositions; low-temperature growth; photoluminescence; solid-source molecular beam epitaxy; structural crystalline quality; Atomic beams; Atomic layer deposition; Crystallization; Degradation; Gallium arsenide; Luminescence; Nitrogen; Silicon alloys; Substrates; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037877
