The role of stress anisotropy in quantum wire and quantum dot formation

Author

Silveira, J.P. ; González, M.U. ; García, J.M. ; González, L. ; González, Y. ; Briones, F.

Author_Institution

Instituto de Microelectron. de Madrid, Spain

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

303

Lastpage

304

Abstract

Stress relaxation during growth of lattice-mismatched III-V compounds can induce the formation of nanostructures. For interfaces where group-V changes, the formation of either quantum wires or quantum dots has been associated with group-V element exchange process [1]. We demonstrate the importance of the stress anisotropy of the surface structure for the formation of quantum dots or wires.

Keywords

III-V semiconductors; anisotropic media; gallium arsenide; gallium compounds; indium compounds; reflection high energy electron diffraction; semiconductor heterojunctions; semiconductor quantum dots; semiconductor quantum wires; stress analysis; stress relaxation; surface reconstruction; GaSb-GaAs; GaSb/GaAs surface reconstruction; InAs-InP; MBE growth; RHEED pattern; lattice-mismatched III-V compounds; nanostructures formation; quantum dot formation; quantum wire; stress anisotropy; stress anisotropy role; stress relaxation; surface structure; Anisotropic magnetoresistance; Gallium arsenide; Monitoring; Nanostructures; Quantum dots; Stress measurement; Surface reconstruction; Surface structures; US Department of Transportation; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037880

Filename

1037880