Title :
Self-assembled nanoholes by molecular beam epitaxial growth and atomically precise in situ etching
Author :
Kiravittaya, S. ; Songmuang, R. ; Schmidt, O.G. ; Panyakeow, S.
Author_Institution :
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Abstract :
Manipulation of nanostructure based on quantum dot (QD) is feasible by applying in situ etching technique. We report a systematic investigation of an in situ etching procedure of capped InAs QD. The AsBr/sub 3/ in situ etching gas produces nanoholes in the GaAs capping layer due to the strain enhanced etching rate on the top of QD. These hole structures can be filled with InAs again to produce lateral QD molecules in the second layer.
Keywords :
III-V semiconductors; atomic force microscopy; etching; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; AsBr/sub 3/; AsBr/sub 3/ in situ etching gas; GaAs; GaAs capping layer; InAs; atomically precise in situ etching; capped InAs quantum dot; hole structures; in situ etching procedure; in situ etching technique; lateral quantum dot molecules; molecular beam epitaxial growth; nanostructure; second layer; self-assembled nanoholes; strain enhanced etching rate; Atomic beams; Atomic force microscopy; Atomic layer deposition; Etching; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Self-assembly; Semiconductor devices; Surface morphology;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037886
