Title :
Signal-to-noise ratio improvement of common-gate CMOS LNA for Ultra-Wide-Band
Author :
Hayashi, Teppei ; Sato, Hiroki ; Hyogo, Akira ; Sekine, Keitaro
Author_Institution :
Dept. of Electr. Eng., Tokyo Univ. of Sci., Noda
fDate :
Nov. 30 2008-Dec. 3 2008
Abstract :
This paper proposes a circuit structure which can improve signal-to-noise ratio of a conventional common-gate CMOS LNA for UWB (Ultra-Wide-Band; 3.1-10.6 GHz) using 0.18 um CMOS technology. The simulated results show that the proposed circuit has gain of 16.3-18.8 dB and NF of less than 3dB as well as good compatibility with input matching in a wide frequency range needed in UWB, and it consumes 16.2 mW with a 1.2 V supply voltage.
Keywords :
CMOS integrated circuits; integrated circuit modelling; low noise amplifiers; ultra wideband technology; circuit structure; common gate CMOS LNA; frequency 3.1 GHz to 10.6 GHz; gain 16.3 dB to 18.8 dB; input matching; power 16.2 MW; signal-to-noise ratio; size 0.18 mum; ultrawideband; voltage 1.2 V; CMOS technology; Capacitance; Character generation; Circuit noise; Impedance matching; Low-noise amplifiers; Paper technology; Radio frequency; Signal to noise ratio; Ultra wideband technology; CMOS; RF; UWB; common gate; low noise amplifier (LNA); noise;
Conference_Titel :
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Conference_Location :
Macao
Print_ISBN :
978-1-4244-2341-5
Electronic_ISBN :
978-1-4244-2342-2
DOI :
10.1109/APCCAS.2008.4745984
