Growth and temperature characteristic of self-assembled InAs-QD on GaInP

The improvement of the characteristic temperature is one of the superior performances that are expected to QD-LD. However, the temperature characteristic has deteriorated at room temperature. As one of the cause, the thermal escape of the carrier from QD to wetting layer or matrix is considered. The (Al/sub 1-x/Ga/sub x/)/sub 0.5/In/sub 0.5/P/InAs system has large band-discontinuity, thus, it is expected to improve the characteristic temperature of QD lasers by embedded InAs-QD in GaInP. We have already reported that the critical thickness of the self-assembled InAs-QD on GaInP was remarkably small, which was less than 1 ML, in comparison with InAs-QD on GaAs and we succeeded in observing PL spectra from InAs QD in GaInP matrix at room temperature by inserting a 10 ML GaAs overlayer on top of the QD layer to suppress the intermixing between InAs QD and the GaInP matrix.