DocumentCode
2325702
Title
The Raman and IR spectroscopy study on the transition metal in ZnO
Author
Li, Y.J. ; Zhang, B. ; Wang, Y. ; Zou, J. ; Lu, W.
Author_Institution
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai, China
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
2
Abstract
The behavior of transition metals in ZnO has become an important topic for spintronics. As the fundamental property, the nano-structural characteristics of the transition metal implanted ZnO have been studied. It is clearly observed that in ZnO the Mn+ implantation and post-annealing result in (1) the formation of crystallographically orientated Zn nanocrystals within the ZnO matrix and (2) Mn atoms occupy the Zn sites in ZnO by Raman spectroscopy. Further annealing of the high-dose Mn-implanted ZnO promotes the formation of ZnMn2O4 compounds near the surface and a porous structure within the implanted region, which is revealed by the transmission electron microscopy, electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. The microstructure of Ni in ZnO has been observed to form a OH-Ni complex by the infrared spectroscopy measurements. This OH-Ni complex is thermally stable up to 500 degC.
Keywords
II-VI semiconductors; Raman spectra; X-ray chemical analysis; annealing; crystallography; electron energy loss spectra; ferromagnetic materials; infrared spectra; ion implantation; magnetic semiconductors; magnetoelectronics; nanoporous materials; surface structure; transmission electron microscopy; wide band gap semiconductors; zinc compounds; IR spectroscopy; OH-Ni complex; Raman spectroscopy; ZnMn2O4; crystallography; electron energy loss spectroscopy; energy dispersive X-ray spectroscopy; metal implantion; microstructure; nanocrystals; nanostructural characteristics; porous structure; post-annealing; spintronics; surface structure; thermal stable; transmission electron microscopy; Annealing; Crystallography; Energy loss; Infrared spectra; Magnetoelectronics; Nanocrystals; Raman scattering; Spectroscopy; Transmission electron microscopy; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4244-5416-7
Electronic_ISBN
978-1-4244-5417-4
Type
conf
DOI
10.1109/ICIMW.2009.5325569
Filename
5325569
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