• DocumentCode
    2325702
  • Title

    The Raman and IR spectroscopy study on the transition metal in ZnO

  • Author

    Li, Y.J. ; Zhang, B. ; Wang, Y. ; Zou, J. ; Lu, W.

  • Author_Institution
    Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2009
  • fDate
    21-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The behavior of transition metals in ZnO has become an important topic for spintronics. As the fundamental property, the nano-structural characteristics of the transition metal implanted ZnO have been studied. It is clearly observed that in ZnO the Mn+ implantation and post-annealing result in (1) the formation of crystallographically orientated Zn nanocrystals within the ZnO matrix and (2) Mn atoms occupy the Zn sites in ZnO by Raman spectroscopy. Further annealing of the high-dose Mn-implanted ZnO promotes the formation of ZnMn2O4 compounds near the surface and a porous structure within the implanted region, which is revealed by the transmission electron microscopy, electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. The microstructure of Ni in ZnO has been observed to form a OH-Ni complex by the infrared spectroscopy measurements. This OH-Ni complex is thermally stable up to 500 degC.
  • Keywords
    II-VI semiconductors; Raman spectra; X-ray chemical analysis; annealing; crystallography; electron energy loss spectra; ferromagnetic materials; infrared spectra; ion implantation; magnetic semiconductors; magnetoelectronics; nanoporous materials; surface structure; transmission electron microscopy; wide band gap semiconductors; zinc compounds; IR spectroscopy; OH-Ni complex; Raman spectroscopy; ZnMn2O4; crystallography; electron energy loss spectroscopy; energy dispersive X-ray spectroscopy; metal implantion; microstructure; nanocrystals; nanostructural characteristics; porous structure; post-annealing; spintronics; surface structure; thermal stable; transmission electron microscopy; Annealing; Crystallography; Energy loss; Infrared spectra; Magnetoelectronics; Nanocrystals; Raman scattering; Spectroscopy; Transmission electron microscopy; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
  • Conference_Location
    Busan
  • Print_ISBN
    978-1-4244-5416-7
  • Electronic_ISBN
    978-1-4244-5417-4
  • Type

    conf

  • DOI
    10.1109/ICIMW.2009.5325569
  • Filename
    5325569