Title :
High-power millimeter-wave planar doublers
Author :
Guan-Leng Tan ; Rebeiz, G.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
This paper presents two different planar doubler designs for MM-wave applications. The doublers are fabricated using two Schottky varactor diodes in series for high power operation. The high-Q design (Q=6) results in a conversion loss of 6.4 dB at an output frequency of 72-73 GHz. The low-Q design (Q=1.6) results in a conversion loss of 9.6/spl plusmn/0.7 dB from 64-78 GHz at -2 V bias, and delivers 71 mW at 74 GHz for an input power of 490 mW (conversion loss of 8.4 dB, at optimal bias of -7 V). The output power shows no sign of saturation, and is limited to 71 mW due to the input source power. The results are quoted "on-chip" and are state of the art for MM-wave planar multipliers. The application areas are in automotive collision avoidance radars and MM-wave communication systems.
Keywords :
Frequency multipliers; Hybrid integrated circuits; Microstrip circuits; Millimetre wave frequency convertors; Millimetre wave integrated circuits; Schottky diodes; Varactors; 490 mW; 6.4 to 9.6 dB; 64 to 78 GHz; 71 mW; EHF; MM-wave communication systems; Schottky varactor diodes; automotive collision avoidance radars; high-Q design; high-power MM-wave frequency doublers; low-Q design; millimeter-wave planar doublers; series diode connection; Automotive engineering; Circuits; Fingers; Frequency conversion; HEMTs; Millimeter wave communication; Radiofrequency amplifiers; Schottky diodes; Semiconductor device measurement; Varactors;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862283