DocumentCode :
2327871
Title :
A new thin film passive integration technology for miniaturisation of mobile phone front end modules: integration of a dual-band power amplifier, switch and diplexer for GSM
Author :
de Graauw, A. ; Copetti, C. ; Weekamp, W.
Author_Institution :
Philips Discrete Semicond., Nijmegen, Netherlands
Volume :
3
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
1925
Abstract :
The use of a new thin film substrate technology for integrating the critical passive parts of RF-circuits of mobile communication equipment is demonstrated. A very compact module that contains two power-amplifiers, two receive/transmit-switches and a diplex-filter for dual-band GSM mobile phone applications was designed, manufactured and tested in order to demonstrate the miniaturisation possibilities with this technology. With a size of 160 sq. mm, the module meets the GSM output power specifications (2 W at 900 MHz and 1 W at 1800 MHz) and the harmonic attenuation requirements. The realised insertion loss of less then 1.5 dB in the receive- and transmit chain together with a receive-transmit-isolation of over 20 dB is sufficient for most GSM applications.
Keywords :
Cellular radio; Losses; Microwave switches; Multiplexing equipment; Thin film circuits; UHF power amplifiers; 1 W; 1800 MHz; 2 W; 900 MHz; GSM; diplexer; dual-band power amplifier; harmonic attenuation requirements; insertion loss; mobile phone front end modules; output power specifications; receive-transmit-isolation; receive/transmit-switches; thin film passive integration technology; Dual band; GSM; Manufacturing; Mobile communication; Mobile handsets; Power generation; Power system harmonics; Substrates; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.862359
Filename :
862359
Link To Document :
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