Ballistic current in In rich InGaAs surface channel MOSFETs

Ballistic drain current of III-V surface channel MOSFETs has been investigated using over-the-barrier transport model. Inversion biased electrostatic properties are determined by 1D self-consistent solution of Schröndinger´s and Poisson´s equations. Inversion carrier density (N_inv), injection velocity (V_inj) and drain current (I_D) are calculated for different In compositions in the channel region. Effect of variation of In composition on drain current is investigated in the ballistic regime and is compared to that of the reported long channel devices. Numerical results show that the increase in In composition in channel region results in increase in drain current. However, compared to the enhancements observed experimentally in long channel In rich devices, the enhancements are insignificant in the ballistic transport regime.