Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Author

Lenci, Silvia ; De Jaeger, B. ; Carbonell, Laureen ; Jie Hu ; Mannaert, G. ; Wellekens, Dirk ; Shuzhen You ; Bakeroot, B. ; Decoutere, Stefaan

Author_Institution

imec vzw, Leuven, Belgium

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

1035

Lastpage

1037

Abstract

High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate together with the AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors and with only one extra lithographic step. The diode anode and the transistor gate are processed together and the same metallization is used for both, avoiding extra metal deposition dedicated to the Schottky junction. A gated edge termination allows obtaining low reverse leakage current (within 1 μA/mm at -600 V), which is several orders of magnitude lower than the one of conventional Schottky diodes processed on the same wafer. Recess is implemented at the anode, resulting in low diode turn-on voltage values.

Keywords

CMOS integrated circuits; III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; metallisation; wide band gap semiconductors; AlGaN-GaN; Au-free AlGaN-GaN power diode; Au-free CMOS-compatible technology; Schottky diodes; Schottky junction; Si; Si substrate; Si wafers; diode anode; gated edge termination; high electron mobility transistors; leakage current; metal-insulator-semiconductor transistors; metallization; size 8 in; transistor gate; AlGaN/GaN Schottky diode; Au-free GaN-on-Si; edge termination; power rectifier;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2267933

Filename

6553126