Title :
Advances in ultra-high linearity E-Mode GaAs PHEMT MMIC amplifiers for use in broadband, high dynamic range applications using complex digital waveforms
Author :
Heil, Ted ; Crain, Steve
Abstract :
Recent advances in MMIC GaAs PHEMT amplifiers have pushed intermodulation (IM) distortion performance beyond the traditional relationship between intercept point and compressed output power levels making them ideal candidates for use in broadband digital transmission using complex modulation such as OFDM and QAM. Single-ended and push-pull structures have improved IP3 and IP2 performance; however, real benefits are exemplified when characterized for ACPR, EVM and MER. This paper will discuss the performance of a variety of MMIC amplifier designs based upon E-Mode PHEMT technology and the method to characterize these amplifiers for applications that employ complex digital modulation.
Keywords :
III-V semiconductors; MMIC amplifiers; OFDM modulation; gallium arsenide; high electron mobility transistors; quadrature amplitude modulation; GaAs; IP2 performance; IP3 performance; OFDM; QAM; broadband applications; broadband digital transmission; complex digital modulation; complex digital waveforms; complex modulation; high dynamic range applications; intermodulation distortion performance; push-pull structures; single-ended structures; ultrahigh linearity E-mode PHEMT MMIC amplifiers; Broadband amplifiers; Digital modulation; Dynamic range; Gallium arsenide; Intermodulation distortion; Linearity; MMICs; PHEMTs; Power amplifiers; Power generation; DOCSIS; Intermodulation; LTE; MMIC amplifiers; PHEMT; WCDMA;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2010 IEEE 11th Annual
Conference_Location :
Melbourne, FL
Print_ISBN :
978-1-4244-6688-7
DOI :
10.1109/WAMICON.2010.5461853
