Title :
New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation
Author :
Fujii, S. ; Fuse, G. ; Inoue, M.
Author_Institution :
Matsushita Electronics Corp.
Abstract :
A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro defects induced by ion implantation and applications using this technique to the failure analysis of MOS device fabrication are presented.
Keywords :
Annealing; Chemical analysis; Chemical processes; Fabrication; Oxidation; Rough surfaces; Scanning electron microscopy; Silicon; Surface roughness; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location :
Tokyo, Japan
DOI :
10.1109/ISSM.1994.729434
