Title :
An integrated Shunt-LDO regulator for serial powered systems
Author :
Karagounis, Michael ; Arutinov, David ; Barbero, Marlon ; Huegging, Fabian ; Krueger, Hans ; Wermes, Norbert
Author_Institution :
Phys. Dept., Univ. of Bonn, Bonn, Germany
Abstract :
In this paper, a new type of regulator is proposed for integration in ASICs used in serially powered systems. In the serial powering scheme, modules are placed in series and fed by a constant current source to reduce the IR drop on the cables which increases powering efficiency. At the module level the needed supply voltages are generated redundantly out of the current supply by several parallel operating ASICs with integrated regulation circuitry. A Shunt-LDO regulator has been developed to allow robust and redundant regulator operation and the generation of different supply voltages by parallel placed devices. The Shunt-LDO regulator scheme combines the capability of Low Drop-Out regulators to generate a constant supply voltage with the feature of shunt regulators to assure a constant current flow through the device. The Shunt-LDO regulator has been developed for application in the framework of next generation hybrid pixel detectors used in high energy physics experiments. This circuit has been prototyped in a 130 nm CMOS technology, capable of generating voltages in a range of 1.2-1.5 V with a minimum drop out voltage of 200 mV. The maximum shunt current is 500 mA with a load regulation factor corresponding to an output impedance of 30 mOmega.
Keywords :
CMOS integrated circuits; application specific integrated circuits; constant current sources; load regulation; semiconductor counters; voltage regulators; ASIC; CMOS technology; constant current source; constant supply voltage generation; current 500 mA; high energy physics experiment; hybrid pixel detector; integrated regulation circuitry; integrated shunt-LDO regulator; load regulation factor; low drop-out regulator; resistance 30 mohm; serial powered system; shunt current; size 130 nm; voltage 1.2 V to 1.5 V; voltage 200 mV; CMOS technology; Cables; Circuits; Current supplies; Detectors; Impedance; Prototypes; Regulators; Robustness; Voltage;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325974