One-dimensional anisotropic photonic crystals based on anisotropic porous silicon

Author

Fesenko, V.I. ; Sukhoivanov, I.A. ; Shulga, S.N. ; Shi, He

Author_Institution

Lab. "Photonics", Kharkov Nat. Univ. of Radio Electron., Kharkov

fYear

2008

fDate

June 29 2008-July 2 2008

Firstpage

457

Lastpage

459

Abstract

The model for description of one-dimensional anisotropic photonic crystals based on anisotropic porous silicon is proposed. The finite difference technique is applied for the scattering matrix parameter computation. Reflectance spectra for two orthogonal polarizations of the incident plane wave are calculated. The dependence of the shift of the spectral position of the photonic band gap edges on the orientation of the optical axis of the structure with respect to the incidence plane of s- or p-polarization incident plane wave is studied.

Keywords

birefringence; elemental semiconductors; finite difference methods; photonic band gap; photonic crystals; porous semiconductors; reflectivity; silicon; spectral line shift; Si; anisotropic porous silicon; birefringence; finite difference technique; incident plane wave; one-dimensional anisotropic photonic crystals; orthogonal polarizations; photonic band gap; reflectance spectra; scattering matrix parameter; spectral position shift; Anisotropic magnetoresistance; Finite difference methods; Optical polarization; Optical scattering; Particle scattering; Photonic band gap; Photonic crystals; Reflectivity; Scattering parameters; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Mathematical Methods in Electromagnetic Theory, 2008. MMET 2008. 12th International Conference on

Conference_Location

Odesa

Print_ISBN

978-1-4244-2284-5

Type

conf

DOI

10.1109/MMET.2008.4581029

Filename

4581029