Title :
Preparation of LNBN thin films by RF sputtering and their dielectric properties
Author :
Li, H.F. ; Meng, Z.Y. ; Huang, G.X.
Author_Institution :
Xi´´an Jiaotong Univ., China
fDate :
29 Oct-2 Nov 1989
Abstract :
(LaNa)0.5Bi2Nb2O9 (LNBN) thin films have been prepared by RF sputtering with substrate temperatures up to 450°C. The structural orientation of the annealed films versus substrate temperature is shown to be complex. The substrate temperature had a profound influence on the dielectric properties of the LNBN thin films. The LNBN thin films display a relaxation phase transition
Keywords :
bismuth compounds; dielectric losses; ferroelectric materials; ferroelectric thin films; ferroelectric transitions; lanthanum compounds; permittivity; sodium compounds; sputter deposition; sputtered coatings; (LaNa)0.5Bi2Nb2O9; 20 to 565 C; RF sputtering; annealed films; dielectric constant; dielectric loss tangent; dielectric properties; film preparation; relaxation ferroelectric; relaxation phase transition; structural orientation; substrate temperature; Annealing; Bismuth; Conductive films; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Radio frequency; Sputtering; Temperature;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1989. Annual Report., Conference on
Conference_Location :
Leesburg, VA
DOI :
10.1109/CEIDP.1989.69574
