Title :
Observation of conductive filament formation in an organic non-volatile memory resistor device
Author :
Dao, T.T. ; Tran, T.V. ; Higashimine, K. ; Okada, H. ; Mott, D. ; Maenosono, S. ; Murata, H.
Author_Institution :
Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
Abstract :
In this paper, an organic nonvolatile resistor memory was made from ZnO nanoparticles dispersed in polymethylmethacrylate. The device exhibited a highly reliable characteristic with retention time greater than 105 s. The memory effect originated from conductive filament (CF) formation. The formation process of the CFs was observed by measuring device emission under bias. The CFs were further visualized through analyses of cross-sectional high-resolution transmission electron microscopy image and energy dispersive x-ray spectroscopy elemental mapping.
Keywords :
II-VI semiconductors; organic semiconductors; random-access storage; resistors; zinc compounds; ZnO; conductive filament formation; elemental mapping; energy dispersive X-ray spectroscopy; memory effect; organic nonvolatile memory resistor device; organic nonvolatile resistor memory; polymethylmethacrylate; transmission electron microscopy image; Indium tin oxide; Microscopy; Nanoparticles; Nonvolatile memory; Resistance; Switches; Zinc oxide; Conductive filament; Device emission; EDS; HRTEM; Organic nonvolatile memory; ZnO NP;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218570
