Logic performance of 40 nm InAs/InxGa1−xAs composite channel HEMTs

Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, In_xGa_1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible. Here, we present the latest advancement of 40 nm InAs/In_xGa_1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.