Effect of high-pressure deuterium oxide annealing on Al2O3 deposited by plasma-assisted atomic layer deposition at low temperature

Author

Yoshitsugu, Koji ; Ohara, Kosuke ; Hattori, Nozomu ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., NAIST, Nara, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

Al₂O₃ thin films were deposited by plasma-assisted atomic layer deposition (PA-ALD), which can have the advantage of low temperature process. Then high pressure deuterium oxide annealing (HPDOA) was performed for reforming qualities of the PA-ALD Al₂O₃. The leakage current and the breakdown field of metal-oxide-semiconductor capacitors with the Al₂O₃ film as the gate insulator were improved after HPDOA. In this study, HPDOA is found to be useful for reforming the Al₂O₃ thin film even if it was deposited by PA-ALD.

Keywords

alumina; annealing; atomic layer deposition; capacitors; deuterium compounds; leakage currents; plasma CVD; semiconductor thin films; Al₂O₃; HPDOA; PA-ALD; breakdown field; gate insulator; high-pressure deuterium oxide annealing; leakage current; low temperature process; metal-oxide-semiconductor capacitor; plasma-assisted atomic layer deposition; thin film; Aluminum oxide; Annealing; Atomic layer deposition; Deuterium; Films; MOS capacitors; Silicon; aluminum oxide; atomic layer deposition; deuterium oxide; high-pressure annealing; post deposition annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218575

Filename

6218575