DocumentCode :
2331968
Title :
An efficient method to identify critical gates under circuit aging
Author :
Wang, Wenping ; Wei, Zile ; Yang, Shengqi ; Cao, Yu
Author_Institution :
Arizona State Univ., Tempe
fYear :
2007
fDate :
4-8 Nov. 2007
Firstpage :
735
Lastpage :
740
Abstract :
Negative bias temperature instability (NBTI) is the leading factor of circuit performance degradation. Due to its complex dependence on operating conditions, especially signal probability, it is a tremendous challenge to accurately predict the degradation rate in reality. On the other hand, we demonstrate in this work that it is feasible to reliably predict the relative importance of gates under NBTI. By identifying critical gates that are the most important ones for timing degradation, we will be able to effectively protect the circuit from aging, with the minimum design overhead. The proposed method is based on a new timing analysis framework that integrates a NBTI-aware library. For each potential critical path, we prove that there exists a particular signal probability, which leads to the worst case of timing degradation. The search of such worst case signal probability provides a safe guardband for the degradation, yet avoiding overly pessimistic analysis. By applying this method to ISCAS and ITC benchmark circuits at the 65 nm node, we demonstrate that in average only 1% of total gates need to be protected in order to control the timing degradation within 10% in ten years. Since this method only requires one-time analysis of each critical path, it is very efficient in computation. With the information of critical gates available, it further enables other resilient design techniques to mitigate circuit aging under NBTI.
Keywords :
logic gates; probability; NBTI-aware library; circuit aging; circuit performance degradation; critical gates identification; negative bias temperature instability; worst case signal probability; Aging; Circuit optimization; Degradation; Integrated circuit reliability; Libraries; Negative bias temperature instability; Niobium compounds; Protection; Timing; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 2007. ICCAD 2007. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4244-1381-2
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2007.4397353
Filename :
4397353
Link To Document :
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