Title :
Transport properties of post-stressed sol-gel-based TiO2 films
Author :
Kondo, Yusuke ; Tamura, Susumu ; Omura, Yasuhisa
Author_Institution :
Grad. Sch. of Sci. Eng., Kansai Univ., Suita, Japan
Abstract :
This paper investigates the trap property of pre- and post-stressed TiO2/SiO2 stacks. It is suggested that transport is ruled by the space-charge-limited current controlled by negative-charged traps. Spectroscopic analysis of the current fluctuation demonstrates that after stress application the current path varies with the polarity of the top electrode; this suggests that there are at least two-different paths inside the degraded TiO2/SiO2 stack.
Keywords :
electrodes; electron traps; silicon compounds; sol-gel processing; space charge; titanium compounds; TiO2-SiO2; current fluctuation; current path; negative-charged trap; post-stressed sol-gel-based TiO2 film; prestressed TiO2-SiO2 stack; space-charge-limited current; spectroscopic analysis; stress application; top electrode; transport properties; trap property; Educational institutions; Electrodes; Films; Fluctuations; MIM capacitors; Stress; constant-voltage stress; insulator film; resistive RAM; sol-gel; space-charge-limited current; trap;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218590
