Effects of ohmic metal thickness on drain current capability of AlGaN/GaN HEMTs

Author

Ogasawara, M. ; Kodama, S. ; Tokuda, H. ; Kuzuhara, M.

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

This paper describes fabrication and characterization of AlGaN/GaN HEMTs for large current operation. By depositing a 1000nm-thick Au metal on Ti/Al/Mo/Au source and drain ohmic contacts, a drain current of more than 4 amperes has been achieved with a total gate width of 10 mm. We discuss the dependence of saturation drain current on gate width in terms of Au thickness and source/drain ohmic electrode width.

Keywords

III-V semiconductors; aluminium alloys; aluminium compounds; electrodes; gallium compounds; gold alloys; high electron mobility transistors; molybdenum alloys; ohmic contacts; power semiconductor devices; semiconductor device metallisation; titanium alloys; wide band gap semiconductors; AlGaN-GaN; HEMT fabrication; Ti-Al-Mo-Au; drain current capability; drain ohmic contact; large current operation; ohmic electrode width; ohmic metal thickness; size 1000 nm; source ohmic contact; Aluminum gallium nitride; Electrodes; Gallium nitride; Gold; HEMTs; Logic gates; MODFETs; AlGaN/GaN; HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218602

Filename

6218602