• DocumentCode
    2332764
  • Title

    Quantum effects of ultrathin OTFT and fabrication processes by atomic hydrogen annealing

  • Author

    Horiuchi, Tomoyasu ; Heya, Akira ; Matsuo, Naoto

  • Author_Institution
    Dept. of Mater. Sci. & Chem., Univ. of Hyogo., Himeji, Japan
  • fYear
    2012
  • fDate
    9-11 May 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We had fabricated the pentacene organic thin-film transistor (OTFT) with very thin film thickness and investigated the electrical characteristics. When the film thickness decreased, the on current of OTFT increased. It is considered that the quantum level is formed in the triangle potential. The mobility of OTFT is improved by using quantum effect. In order to fabricate uniformly ultrathin OTFT without pinhole, the size of pentacene island must be smaller. We tried to fabricate pentacene island using atomic hydrogen annealing (AHA). It is found that pentacene and resist can be etched by AHA without damage. It is expected that this method is a promising technique for fabrication of ultrathin OTFT with small island.
  • Keywords
    annealing; thin film transistors; AHA; atomic hydrogen annealing; electrical characteristics; fabrication processes; pentacene island; pentacene organic thin-film transistor; quantum effects; quantum level; triangle potential; uniformly ultrathin OTFT; very thin film thickness; Etching; Films; Organic thin film transistors; Pentacene; Resists; Substrates; OTFT; atomic hydrogen annealing; pentacene; quantum effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-0837-3
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2012.6218622
  • Filename
    6218622