DocumentCode
2332764
Title
Quantum effects of ultrathin OTFT and fabrication processes by atomic hydrogen annealing
Author
Horiuchi, Tomoyasu ; Heya, Akira ; Matsuo, Naoto
Author_Institution
Dept. of Mater. Sci. & Chem., Univ. of Hyogo., Himeji, Japan
fYear
2012
fDate
9-11 May 2012
Firstpage
1
Lastpage
2
Abstract
We had fabricated the pentacene organic thin-film transistor (OTFT) with very thin film thickness and investigated the electrical characteristics. When the film thickness decreased, the on current of OTFT increased. It is considered that the quantum level is formed in the triangle potential. The mobility of OTFT is improved by using quantum effect. In order to fabricate uniformly ultrathin OTFT without pinhole, the size of pentacene island must be smaller. We tried to fabricate pentacene island using atomic hydrogen annealing (AHA). It is found that pentacene and resist can be etched by AHA without damage. It is expected that this method is a promising technique for fabrication of ultrathin OTFT with small island.
Keywords
annealing; thin film transistors; AHA; atomic hydrogen annealing; electrical characteristics; fabrication processes; pentacene island; pentacene organic thin-film transistor; quantum effects; quantum level; triangle potential; uniformly ultrathin OTFT; very thin film thickness; Etching; Films; Organic thin film transistors; Pentacene; Resists; Substrates; OTFT; atomic hydrogen annealing; pentacene; quantum effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-4673-0837-3
Type
conf
DOI
10.1109/IMFEDK.2012.6218622
Filename
6218622
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