DocumentCode
2332819
Title
Band structure calculation of strained graphene on hexagonal boron nitride
Author
Ohmi, Takeshi ; Kamakura, Yoshinari
Author_Institution
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
fYear
2012
fDate
9-11 May 2012
Firstpage
1
Lastpage
2
Abstract
The band structure of the graphene on hexagonal boron nitride system are calculated with the ab-initio method, and the dependence on the stress applied to the direction perpendicular to the sheet are investigated. It is shown that there exists an optimal stress condition for widening the band gap of the graphene, which could greatly improve the transistor on/off ratio, while sacrificing the good on-current performance.
Keywords
boron compounds; energy gap; field effect transistors; graphene; stress analysis; BN; C; ab-initio method; band gap; band structure calculation; field-effect transistor; hexagonal boron nitride system; optimal stress condition; strained graphene; stress dependence; transistor on-off ratio; Boron; Educational institutions; Logic gates; Materials; Photonic band gap; Stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-4673-0837-3
Type
conf
DOI
10.1109/IMFEDK.2012.6218625
Filename
6218625
Link To Document