I–V performances of aligned ZnO nanorods/Mg0.3Zn0.7O thin film heterojunction for MESFET applications

Mg_0.3Zn_0.7O with the resistance of 106 Ω/cm, can acts as a semi-insulating material in MESFET structure, was deposited on quartz substrate before being immersed in ZnO solution for 4.5 hours. The ZnO solution of 0.05M was prepared one day earlier, was stirred and heat, before being left at room temperature to get better solubility. This chemical bath deposition technique was believed to be very easy, low cost technique, yet can produced a very uniform, aligned ZnO nanorods. Field emission scanning electron microscope (FESEM) depicts that an aligned ZnO nanorods were successfully grown on Mg_0.3Zn_0.7O that in the other way has acted as a catalyst for the better growth of aligned ZnO. The diameter of the nanorod has found out to be in the average of 75 nm while the thickness is around 1.6 μm. X-ray diffraction spectra has recorded that this aligned ZnO shows very intense (002) peak, which was between 15° and 60°, indicating a high degree of crystallinity.