Title :
Hydrogen effect on characteristics of the resistive switching memory
Author :
Otsuka, Shintaro ; Shimizu, Tomohiro ; Shingubara, Shoso ; Kurumi, Satoshi ; Suzuki, Kaoru ; Iwata, Nobuyuki ; Watanabe, Tadataka ; Takano, Yoshiki ; Takase, Kouichi
Author_Institution :
Coll. of Sci. & Technol., Nihon Univ., Tokyo, Japan
Abstract :
Hydrogen anneal effects on reproducibility of the switching voltages for a resistive switching memory using anodic porous alumina have been investigated. The hydrogen anneal made the reproducibility worse.
Keywords :
annealing; anodic porous alumina; hydrogen anneal; hydrogen effect; reproducibility; resistive switching memory; switching voltage; Annealing; Argon; Educational institutions; Films; Hydrogen; Iterative closest point algorithm; Switches; Hydrogen Effect; ReRAM; Resistive Switching Memory;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218628
