• DocumentCode
    2332888
  • Title

    Hydrogen effect on characteristics of the resistive switching memory

  • Author

    Otsuka, Shintaro ; Shimizu, Tomohiro ; Shingubara, Shoso ; Kurumi, Satoshi ; Suzuki, Kaoru ; Iwata, Nobuyuki ; Watanabe, Tadataka ; Takano, Yoshiki ; Takase, Kouichi

  • Author_Institution
    Coll. of Sci. & Technol., Nihon Univ., Tokyo, Japan
  • fYear
    2012
  • fDate
    9-11 May 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Hydrogen anneal effects on reproducibility of the switching voltages for a resistive switching memory using anodic porous alumina have been investigated. The hydrogen anneal made the reproducibility worse.
  • Keywords
    annealing; anodic porous alumina; hydrogen anneal; hydrogen effect; reproducibility; resistive switching memory; switching voltage; Annealing; Argon; Educational institutions; Films; Hydrogen; Iterative closest point algorithm; Switches; Hydrogen Effect; ReRAM; Resistive Switching Memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-0837-3
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2012.6218628
  • Filename
    6218628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2332888