Fin width influence on analog performance of SOI and bulk FINFETs

Author

Oliveira, A.V. ; Agopian, Paula G. D. ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, Cor

Author_Institution

LSI, Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents an experimental comparison of the analog performance between a triple-gate FinFET fabricated on Bulk (BFF) and on Silicon-On-Insulator - SOI (SFF) substrates. This comparison was performed based on the drain current, subthreshold swing, transconductance, output conductance and finally the intrinsic voltage gain. For narrow fin width, the SFF presents better performance than BFF, while for wider fins, the BFF showed to be more optimized than SFF, due to the existence of a parasitic back transistor in the SOI device.

Keywords

MOSFET; silicon-on-insulator; BFF; SFF substrates; SOI FINFETs; analog performance; bulk FINFETs; drain current; fin width; intrinsic voltage gain; output conductance; parasitic back transistor; silicon-on-insulator; subthreshold swing; transconductance; triple-gate FinFET; FinFETs; Gain; Logic gates; Performance evaluation; Silicon-on-insulator; Substrates; Analog Performance; Bulk; Fin width; SOl; triple gate FinFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4799-4684-6

Type

conf

DOI

10.1109/ICCDCS.2014.7016150

Filename

7016150