DocumentCode :
233300
Title :
Unity gain frequency on FinFET and TFET devices
Author :
Agopian, Paula G. D. ; Martino, Joao Antonio ; Vandooren, A. ; Rooyackers, R. ; Simoen, Eddy ; Thean, A. ; Claeys, Cor
Author_Institution :
Univ. of Sao Paulo, Sao Paulo, Brazil
fYear :
2014
fDate :
2-4 April 2014
Firstpage :
1
Lastpage :
4
Abstract :
In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.
Keywords :
MOSFET; pFinFET; pTFET; transconductance; unity gain frequency; Capacitance; FinFETs; Logic gates; Performance evaluation; Transconductance; Tunneling; Band-to-band tunneling (BTBT); Capacitance; Multiple Gate Tunneling Field Effect Transistor (MuGTFET); Silicon-On-Insulator (SOI); analog performance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4799-4684-6
Type :
conf
DOI :
10.1109/ICCDCS.2014.7016152
Filename :
7016152
Link To Document :
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