Optimized design of lateral PIN photodiodes regarding responsivity and SNR as a function of operating temperature

Author

Novo, Carla ; Zapata, Renato ; Batista, Jorge ; Stolf, Ricardo ; Giacomini, Renato

Author_Institution

Electr. Eng. Dept. Centro, Centro Univ. da FEI, São Bernardo do Campo, Brazil

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

6

Abstract

This paper addresses a simultaneous analysis of the intrinsic length (L₁) and the operating temperature, which are, respectively, a preeminent design variable and a fundamental boundary condition for lateral PIN photodiodes. The analysis is focused in the responsivity and signal-to-noise ratio (SNR), in order to investigate the best configuration for a given technology. CMOS PIN photodiodes with different characteristics were designed and fabricated Experimental measurements were performed and the optical devices showed reasonable performance in the visible spectrum. The best responsivity (37%) was achieved for L₁ = 11 μm, at room temperature and light wavelength of 650 nm. The best signal-to-noise ratio was found to be 6000 for red and 700 for blue lights, both at T = 200 K.

Keywords

CMOS integrated circuits; p-i-n photodiodes; CMOS photodiodes; SNR; fundamental boundary condition; intrinsic length; lateral PIN photodiodes; operating temperature; optical devices; preeminent design variable; responsivity; signal-to-noise ratio; size 11 mum; temperature 200 K; temperature 293 K to 298 K; visible spectrum; wavelength 650 nm; Dark current; Junctions; Optical sensors; PIN photodiodes; Silicon; Temperature measurement; depletion; photodiodes quantum efficiency; responsivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4799-4684-6

Type

conf

DOI

10.1109/ICCDCS.2014.7016170

Filename

7016170