Intrafield effects and device manufacturability: a statistical simulation approach

Author

Krivokapic, Zoran ; Minvielle, Anna ; Heavlin, William D.

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

1998

fDate

35953

Firstpage

36

Lastpage

39

Abstract

For sub-250 nm technologies, one of the major systematic sources of variation is the intrafield variation induced by the stepper lens imperfections on critical layers. Using well-calibrated process, device, and statistical simulators, we predict the effects of lens aberrations on the manufacturing distributions of gate critical dimensions, drive currents, and ring oscillators. For a case involving four dies per reticle field, we predict significantly different distributions per reticle field

Keywords

aberrations; circuit simulation; electric current; integrated circuit modelling; integrated circuit yield; lenses; oscillators; photolithography; reticles; semiconductor process modelling; statistical analysis; 250 nm; calibrated device simulators; calibrated process simulators; calibrated statistical simulators; critical layers; device manufacturability; drive currents; gate critical dimensions; intrafield effects; intrafield variation; lens aberrations; manufacturing distributions; reticle field; reticle field distributions; ring oscillators; statistical simulation; stepper lens imperfections; systematic variation sources; Circuit simulation; Delay; Drives; Lenses; Manufacturing processes; Predictive models; Resists; Ring oscillators; Temperature; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1998. 3rd International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-4338-7

Type

conf

DOI

10.1109/IWSTM.1998.729764

Filename

729764