• DocumentCode
    2334591
  • Title

    Design and implementation of high-performance high-valency ling adders

  • Author

    Kocak, Taskin ; Patil, Preeti

  • Author_Institution
    Dept. of Comput. Eng., Bahcesehir Univ., Istanbul, Turkey
  • fYear
    2012
  • fDate
    18-20 April 2012
  • Firstpage
    224
  • Lastpage
    229
  • Abstract
    Parallel prefix adders are used for efficient VLSI implementation of binary number additions. Ling architecture offers a faster carry computation stage compared to the conventional parallel prefix adders. Recently, Jackson and Talwar proposed a new method to factorize Ling adders, which helps to reduce the complexity as well as the delay of the adder further. This paper discusses the design and implementation details for such lower complexity, fast parallel prefix adders based on Ling theory of factorization. In particular, valency or radix, the number of inputs to a single node, is explored as a design parameter. Several low and high valency adders are implemented in 65 nm CMOS technology. Experimental results show that the high-valency Ling adders have superior area×delay characteristics over previously reported Ling-based or non-Ling adders for the same input size. Moreover, our 20-bit high valency adder has a better area×delay measurement than the previously-published 16-bit adders.
  • Keywords
    CMOS digital integrated circuits; VLSI; adders; integrated circuit design; CMOS technology; Ling architecture; Ling theory of factorization; binary number additions; carry computation stage; design parameter; efficient VLSI implementation; fast parallel prefix adders; high-performance high-valency Ling adders; low valency adders; radix; size 65 nm; word length 20 bit; Adders; Complexity theory; Computer architecture; Delay; Equations; Inverters; Logic gates; Adders; arithmetic; integrated circuits; logic design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2012 IEEE 15th International Symposium on
  • Conference_Location
    Tallinn
  • Print_ISBN
    978-1-4673-1187-8
  • Electronic_ISBN
    978-1-4673-1186-1
  • Type

    conf

  • DOI
    10.1109/DDECS.2012.6219062
  • Filename
    6219062