Bias and variance in single and multiple response surface modeling

Author

Smith, T.H. ; Goodlin, B.E. ; Boning, D.S. ; Oji, C.O. ; Chung, J.E. ; Sawin, H.H.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1998

fDate

35953

Firstpage

60

Lastpage

63

Abstract

This work examines the single response surface (SRS) and multiple response surface (MRS) modeling of wafer uniformity using experimental data from a chemical-mechanical polishing process. It is shown that the SRS estimate of uniformity measures total variation whereas the MRS estimate measures only spatial variation. The experimental results demonstrate that the MRS method is a biased estimator, whereas the SRS method is not. Finally, it is shown that the bias in the MRS estimate can lead one to choose a nonoptimal process recipe

Keywords

chemical mechanical polishing; integrated circuit measurement; integrated circuit yield; semiconductor process modelling; surface fitting; surface topography; MRS estimate; MRS estimate bias; MRS method; SRS estimate; SRS method; chemical-mechanical polishing process; multiple response surface modeling; nonoptimal process recipe selection; response surface modeling bias; response surface modeling variance; single response surface modeling; spatial uniformity variation; total uniformity variation; wafer uniformity; Chemical processes; Chemical technology; Conductors; Laboratories; Potential well; Response surface methodology; Semiconductor device modeling; Semiconductor device noise; Thickness measurement; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1998. 3rd International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-4338-7

Type

conf

DOI

10.1109/IWSTM.1998.729771

Filename

729771