Title :
Technical thin film formation methods in low temperature plasma
Author :
Montasser, Kadry I. ; Mohamed, Osama I.
Author_Institution :
Dept. of Electr. Eng., Al-Azhar Univ., Cairo, Egypt
Abstract :
The relation between the nucleation and growth of thin films, and the deposition variable is presented. This relation serves as a rough guide in the preparation of films with particular properties. The selection of the deposition technique for making the film is one of the fatal factors that should be considered. The properties and applications of low pressure low temperature plasma are given. The formation of Si-N (Silicon-Nitrogen) thin film on silicon substrate at low pressure low temperature by plasma CVD is presented
Keywords :
nucleation; plasma CVD; plasma CVD coatings; silicon; silicon compounds; substrates; Si; SiN; deposition variable; growth; low pressure low temperature plasma; low temperature plasma; nucleation; plasma CVD; thin film formation; Amorphous materials; Plasma applications; Plasma materials processing; Plasma properties; Plasma temperature; Plasma x-ray sources; Semiconductor thin films; Sputtering; Substrates; Transistors;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location :
Hamamatsu
Print_ISBN :
0-7803-1880-3
DOI :
10.1109/IMTC.1994.351914
