A Simulation Study of Multiplication Factor in Cylindrical Diode

Author

Mahjour-Shafiei, Masoud ; Afhami, Maryam Mohamadzadeh

Author_Institution

Dept. of Phys., Univ. of Tehran, Tehran, Iran

Volume

42

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

2273

Lastpage

2276

Abstract

Multiplication factor in a cylindrical diode has been studied using a 1d3v particle in cell simulation code for both inner cathode and outer cathode polarities. The simulation results are compared with a simple theoretical model. Simulations that are based on realistic cross sections are in qualitative agreement with the theoretical model. The disagreement between theoretical model and simulations is explained in view of the fact that in the simulation, realistic cross section is employed; however, the theoretical model is based on a simple ionization factor concept.

Keywords

Monte Carlo methods; cathodes; discharges (electric); ionisation; plasma diodes; plasma simulation; plasma sources; 1d3v particle in cell simulation code; Monte Carlo collision; cylindrical diode; gas discharge; inner cathode polarities; ionization factor concept; multiplication factor; outer cathode polarities; realistic cross sections; simple theoretical model; Cathodes; Data models; Electric potential; Ionization; Mathematical model; Plasmas; Semiconductor process modeling; Gas discharge; Monte Carlo collision; particle-in-cell simulation;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2014.2341643

Filename

6876153