Title :
Nitrogen influence on the properties of the α-C films and α-C/Si heterojunction
Author :
Semikina, T.V. ; Shmyryeva, A.N.
Author_Institution :
Nat. Tech. Univ. of Ukraine, Kiev, Ukraine
Abstract :
An effect of nitrogen on the optical and electrophysical properties of α-C films and α-C/Si heterojunction has been studied. Nitrogen was introduced into a gas mixture within the range of 0 to 45% during the process of chemical-vapour deposition of α-C films. the substantial variations of optical and electrophysical properties of α-C films and α-C/Si heterojunction at different nitrogen concentration were observed. In particular, the character of observed changes has opposite behaviour at nitrogen concentration range of 0-20% and 20-45%. The electron paramagnetic resonance and Auger spectrometry of these samples do not exhibit the nitrogen content in the films. The Raman spectroscopy reveals a diamond phase in the films. An improvement of the diode parameters of α-C/Si heterojunction and changing of permittivity and carrier mobility as a result of nitrogen content in the gas mixture were obtained from I-V and C-V measurements
Keywords :
CVD coatings; Raman spectra; carbon; carrier mobility; electrical conductivity; nitrogen; permittivity; semiconductor heterojunctions; α-C film; α-C/Si heterojunction; Auger spectrometry; C:N; C:N-Si; Raman spectroscopy; carrier mobility; chemical vapour deposition; diamond like carbon phase; electrical conductivity; electron paramagnetic resonance; nitrogen content; optical properties; permittivity; Chemical processes; Diodes; Electron optics; Heterojunctions; Nitrogen; Optical films; Paramagnetic resonance; Raman scattering; Semiconductor films; Spectroscopy;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730162