DocumentCode :
2341067
Title :
Flash thermal processing through the melting point of silicon
Author :
Cibere, J.J. ; McCoy, S.P. ; Camm, D. ; Stuart, G.C. ; Elliott, K.
Author_Institution :
Vortek Ind. Ltd., Vancouver, BC, Canada
fYear :
2003
fDate :
23-26 Sept. 2003
Firstpage :
55
Lastpage :
62
Abstract :
The recent capability to achieve sub-millisecond surface temperature increases of greater than 600°C over the entire surface of 300 mm wafers using flash-assist rapid thermal processing, fRTPTM has allowed the exploration of silicon´s response to rapid thermal processes over the entire surface of the wafer. Previous results from high-speed processing of silicon through its equilibrium melting point have only been attainable by localized, small area, application of high-powered lasers. We report data obtained from a narrow band radiometer, operating at 1450±30 nm with a 25 kHz sampling rate, that indicates anomalous emissions during melting. Interesting re-crystallization behavior of the bare silicon surface that is cooling 500.000°C/s through its equilibrium melting point after a flash anneal from an intermediate temperature of 900°C is also reported. Wafer survivability after exposure to greater than 600°C surface temperature jumps from intermediate temperatures of 700°C to 900°C also demonstrates the inherent robustness of the wafer to withstand large thermal gradient at elevated bulk temperatures imposed during fRTP.
Keywords :
annealing; elemental semiconductors; melting point; rapid thermal processing; recrystallisation; silicon; 25 kHz; 300 nm; 700 to 900 degC; RTP; Si; cooling; flash annealing; flash-assist rapid thermal processing; high-powered laser application; inherent robustness; melting point; narrow band radiometry; recrystallization; silicon surface; sub-millisecond surface temperature; thermal gradient; wafer surface; Annealing; Cooling; Laser applications; Narrowband; Radiometry; Rapid thermal processing; Robustness; Sampling methods; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN :
0-7803-7874-1
Type :
conf
DOI :
10.1109/RTP.2003.1249124
Filename :
1249124
Link To Document :
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