Title :
W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures
Author :
Machac, Pavel ; Myslik, V. ; Vrnata, M. ; Zlamal, J. ; Svoboda, Poemysl
Author_Institution :
Dept. of Solid State Eng., Inst. of Chem. Technol., Prague
Abstract :
The contribution deals with the optimization of Ge/Pd type ohmic contacts prepared with the help of laser annealing. The best results were obtained in the case of Pt/W/Ge/Pd/n+-GaAs and Pt/W/Pt/Ge/Pd/n+-GaAs contact structures (rc~4×10-16 Ω cm2). The optimal inert atmosphere for the laser annealing of these contacts is argon, the best metal for the overlayer of the contact is platinum. The quantum standard of resistance based on quantum Hall phenomena with the contact structure of W/Pt/Ge/Pd type is shown as an example. Good contact pads of the prepared sample have the resistance of about 500 Ω
Keywords :
III-V semiconductors; germanium; laser beam annealing; ohmic contacts; palladium; platinum; quantum Hall effect; semiconductor device metallisation; semiconductor-metal boundaries; tungsten; 500 ohm; W-Pt-Ge-Pd-GaAs; contact optimization; contact pads; laser annealing; ohmic contacts; optimal inert atmosphere; quantum Hall phenomena; quantum standard of resistance; Annealing; Argon; Atmosphere; Chemical technology; Conductivity; Doping; Gallium arsenide; Gold; Metallization; Solid state circuits;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730190
