DocumentCode
2341111
Title
Heat transfer in product patterned silicon semiconductor substrate
Author
Lojek, B.
Author_Institution
ATMEL Corp., Colorado Springs, CO, USA
fYear
2003
fDate
23-26 Sept. 2003
Firstpage
75
Lastpage
82
Abstract
This work investigates the heat transfer in semi-transparent medium such as production substrate used in IC´s manufacturing. First, an experimental proof is provided showing that semiconductor (silicon) substrate is a semi-transparent material. Second, volumetric power absorption during thermalization of incident irradiation is calculated for typical condition encountered in RTP processing.
Keywords
elemental semiconductors; heat radiation; heat transfer; rapid thermal processing; silicon; thermal conductivity; IC manufacturing; RTP; Si; heat transfer; semitransparent material; silicon semiconductor substrate; thermalization; volumetric power absorption; Absorption; Heat transfer; Inorganic materials; Optical distortion; Optical materials; Semiconductor device manufacture; Semiconductor materials; Silicon; Substrates; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN
0-7803-7874-1
Type
conf
DOI
10.1109/RTP.2003.1249126
Filename
1249126
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