Title :
A comparision of small signal homojunction and heterojunction model
Author_Institution :
Dept. of Microelectron., Tech. Univ. of Brno
Abstract :
The N-AlGaAs/p-GaAs heterojunction with dc bias and small ac signal is investigated. It is shown that its complex small signal admittance consists of two contributions; the first one is the minority electron diffusion in quasineutral p-region region and the second one is the process of thermionic emission at the abrupt heterointerface
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; minority carriers; p-n heterojunctions; thermionic electron emission; AlGaAs-GaAs; admittance; homojunction; minority electron diffusion; n-AlGaAs/p-GaAs heterojunction; small signal model; thermionic emission; Admittance; Boundary conditions; Current density; Electrons; Equations; Heterojunctions; Microelectronics; Signal processing; Tunneling; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730197
